MRF1570N

470 MHz，70 W，12.5 V寬帶射頻功率LDMOS; ? Specified Performance @ 470 MHz, 12.5 VoltsOutput Power: 70 WattsPower Gain: 11.5 dBEfficiency: 60%\n? Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive\n? Excellent Thermal Stability\n? Characterized with Series Equivalent Large–Signal Impedance Parameters\n? Broadband–Full Power Across the Band:135–175 MHz400–470 MHz\n? Broadband Demonstration Amplifier Information Available Upon Request\n? 200°C Capable Plastic Package\n? N Suffix Indicates Lead-Free Terminations. RoHS Compliant.\n? In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.\n;

The MRF1570NT1 and MRF1570FNT1 are designed for broadband commercial and industrial applications with frequencies to 470 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.

恩XP

MRF1570N

RF Power Field Effect Transistors

MRF1570NT1

RF Power Field Effect Transistors

MRF1570NT1

RF Power Field Effect Transistors

MRF1570NT1_08

RF Power Field Effect Transistors