| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MRF4 | Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | |
MRF4 | TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES | bel Bel Fuse Inc. | bel | |
Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | ||
NPN SILICON RF POWER TRANSISTORS 25WPEP-30MHzRFPOWERTRANSISTORNPNSILICON | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheMRF406isDesignedfor12.5V30MHzPowerAmplifierApplications. FEATURESINCLUDE: ?CommonEmitter ?OutputPower=20W(PEP) | ASI Advanced Semiconductor | ASI | ||
12.5V 30MHz Power Amplifier FEATURESINCLUDE: ?CommonEmitter ?OutputPower=20W(PEP) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
RF POWER TRANSISTOR
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF POWER TRANSISTORS NPN SILICON TheRFLine ???????NPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@ | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
The RF Line NPN Silicon RF Power Transistor TheRFLineNPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@100W(P | MACOM Tyco Electronics | MACOM | ||
The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V TheRFLineNPNSiliconPowerTransistor 100W(PEP),30MHz,28V Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified12.5V,30MHzcharacteristics— Outputpower=100W(PEP) Minimumgain=10dB Efficiency=40 ?Intermodulationdist | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF421isDesignedforHighlinearamplifierapplicationsfrom2.0to30MHZ. FEATURES: ?PG=12dBmin.at100W/30MHz ?IMD3=-30dBcmax.at100W(PEP) ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz Designedprimarilyforapplicationasahigh-powerlinearamplifierfrom2.0to30MHz. ●Specified12.5V,30MHzcharacteristics— Outputpower=100W(PEP) Minimumgain=10dB Efficiency=40 ●Intermodulationdistortion@100W(PEP)—IMD=-30dB(min.) ●100testedforload | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
NPN Silicon RF Power Transistor TheRFLine ???????NPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@ | ELEFLOW eleflow technologies co., ltd. | ELEFLOW | ||
NPN Silicon RF power transistor Description: MRF422isdesignedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. Features: Specified28Volt,30MHzCharacteristics OutputPower=150W(PEP),MinimumGain=10dB,Efficiency=40 IntermodulationDistortion@150W(PEP),IMD=–30d | ELEFLOW eleflow technologies co., ltd. | ELEFLOW | ||
RF POWER TRANSISTORS NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified28Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@150W(P | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF422isDesignedfor2.0MHzto30MHz,28VHighPowerLinearAmplifierApplications.ForhFEMatchedPairsOrderASIMRF422MP. | ASI Advanced Semiconductor | ASI | ||
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified28V,30MHzcharacteristics— Outputpower=150W(PEP) Minimumgain=10dB Efficiency=40 ?Intermodulationdistortion@150W(PEP)—IMD=–30dB(min.) ?100testedforloadm | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
The RF Line NPN Silicon RF Power Transistor TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified28Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@150W(P | MACOM Tyco Electronics | MACOM | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF422isDesignedfor2.0MHzto30MHz,28VHighPowerLinearAmplifierApplications.ForhFEMatchedPairsOrderASIMRF422MP. | ASI Advanced Semiconductor | ASI | ||
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor ...designedforhighgaindriverandoutputlinearamplifierstagesin1.5to30MHzHF/SSBequipment. ?Specified28Volt,30MHzCharacteristics— OutputPower=25W(PEP) MinimumGain=22dB Efficiency=35 ?IntermodulationDisto | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
調(diào)幅 （AM）_功率放大 （L）
- 封裝形式：
貼片封裝
- 極限工作電壓：
30V
- 最大電流允許值：
3.3A
- 最大工作頻率：
30MHZ
- 引腳數(shù)：
4
- 可代換的型號(hào)：
BLX13,BLY93A,3DA30D,
- 最大耗散功率：
25W
- 放大倍數(shù)：
- 圖片代號(hào)：
G-127
- vtest：
30
- htest：
30000000
- atest：
3.3
- wtest：
25
詳細(xì)參數(shù)
- 型號(hào)：
MRF4
- 制造商：
Ferraz Shawmut
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
BEL |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
SMC |
22+ |
PQFP |
1139 |
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù) |
詢價(jià) | ||
24+ |
5000 |
公司存貨 |
詢價(jià) | ||||
MOT |
24+ |
金屬帽 |
2978 |
十年品牌!原裝現(xiàn)貨!!! |
詢價(jià) | ||
東芝 |
100 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠 |
詢價(jià) | ||||
FREESCALE |
250 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | ||||
MOTOROL |
2020+ |
CASE211 |
40 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
Microchip |
17+ |
TSSOP16 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
MOTOROLA |
23+ |
TO220 |
7780 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
MOT |
24+ |
原廠封裝 |
3500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
