首頁 >MSG40T120FQC>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L1200V,1.45V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologyinautomotiveapplications. Features | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.42V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotiveapplications. Features | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.67V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,thisdeviceoffersgood performancewithlowonstatevoltageandlowswitchinglossesfor bothhardandsoftswitchingtopologiesinautomotiveapplications. Features ?Extremel | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Power,Single,N-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.67V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyin TO2473?leadpackage,thisdeviceoffersgoodperformancewithlow onstatevoltageandlowswitchinglossesforbothhardandsoft switchingtopologiesinautomotiveapplications. Features ?ExtremelyEfficientTrench | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
1200V,40A,Irrm=12.3AIGBTMOSFET DESCRIPTION TheAM40T120isavailableinTO-247Package FEATURES ?FastSwitching ?LowVCE(sat):2.1V ?PositiveTemperatureCoefficient ?VerySoft,FastRecoveryAnti-ParallelDiode ?Irrm:12.3A APPLICATION ?UPS ?WeldingConverters ?ConvertersWithHighSwitchingFrequency | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
IGBT-FieldStop,Trench1200V,40A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.5V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGHL40T120RWDoffersthe optimumperformancewithlowconductionlossesandgoodswitching controllabilityforahighefficiencyoperationinvariousapplications likemotorcontr | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),NonSCR,TO247-3L1200V,1.7V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGHL40T120SWDoffersthe optimumperformancewithlowswitchingandconductionlossesforhigh efficiencyoperationsinvariousapplicationslikeSolar,UPSandESS. Features ?M | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
FieldStopIGBT DESCRIPTION ·HighCurrentCapability ·LowSwitchingLoss ·PositiveTemperatureCoefficientforEasyParallelOperation APPLICATIONS ·BoostandInverterinSolarApplications ·TUPS ·EnergyStorageSystem | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SoftSwitchingSeries ?Shortcircuitwithstandtime–10μs ?Designedfor: -SoftSwitchingApplications -InductionHeating ?TrenchStop? andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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