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MTB3N100E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTB3N100E
廠商型號(hào)

MTB3N100E

功能描述

TMOS POWER FET 3.0 AMPERES 1000 VOLTS

文件大小

262.24 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-26 23:00:00

MTB3N100E規(guī)格書詳情

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Short Heatsink Tab Manufactured — Not Sheared

? Specially Designed Leadframe for Maximum Power Dissipation

? Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number

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onsemi(安森美)
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7350
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2020+
TO-263
80000
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ON(安森美)
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8000
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589220
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MOTOROLA
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3000
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433
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24+
30000
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5000
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23+
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12335
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8000
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