MTP10N40E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP10N40E規(guī)格書詳情
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Capability Specified at Elevated Temperature
? Low Stored Gate Charge for Efficient Switching
? Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
? Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
產(chǎn)品屬性
- 型號：
MTP10N40E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA/ |
3297 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價(jià) | ||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
ON/安森美 |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
ON/安森美 |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
ON/安森美 |
23+ |
NA |
25630 |
原裝正品 |
詢價(jià) | ||
ON/安森美 |
21+ |
NA |
2578 |
只做原裝,假一罰十 |
詢價(jià) | ||
ON/安森美 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
MOTOROLA |
22+ |
220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
MAXPLUS |
24+ |
65200 |
詢價(jià) | ||||
ON |
24+ |
N/A |
1060 |
詢價(jià) |
