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MTP2N60

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP2N60E

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N60E

N-Channel Enhancement-Mode Silicon Gate

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage?blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE?FETisdesignedtowithstandhi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTP2N60E

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTP2N60E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDT2N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

NDT2N60P

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

NJ2N60

2.0A600VN-CHANNELPOWERMOSFET

FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ2N60

2.0A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

詳細參數(shù)

  • 型號：

    MTP2N60

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO 220
161155
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ON
23+
TO-220
6893
詢價
ON
24+
N/A
2520
詢價
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
MOT
06+
TO-220
1800
全新原裝 絕對有貨
 詢價
ON
2020+
TO-220
35000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
MOT/ON
23+
TO-220
10000
公司只做原裝正品
 詢價
ON/安森美
22+
TO-220
6000
十年配單,只做原裝
 詢價
MOT/ON
23+
TO-220
6000
原裝正品，支持實單
 詢價
IR
23+
TO-220
3880
正品原裝貨價格低
 詢價
更多MTP2N60供應(yīng)商 更新時間2025-1-26 19:09:00

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