MTP50N06E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP50N06EL

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

MTP50N06EL

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET? Power Field Effect Transistor\nN–Channel Enhancement–Mode Silicon GateThis advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low volt;

恩XP

MTP50N06EL

N-Channel 60-V (D-S) MOSFET

MTP7508

NELL尼爾
模塊

NELL尼爾