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MV21009

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MV21009-150A

包裝：托盤 封裝/外殼：模具 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 可變電容（變?nèi)萜?，可變電抗器?描述：GAAS TVAR NON HERMETIC EPSM SMT

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

AGN21009

HighSensitivity,with100mWnominaloperatingpower,inacompactandspacesavingcase

FEATURES 1.Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. 2.Highsensitivitysinglesidestable type(Nominaloperatin

PanasonicPanasonic Semiconductor

松下松下電器

AGN21009

ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY

FEATURES ?Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. ?Outstandingsurgeresistance. Surgewithstandbetweenopencontac

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AGN21009Z

ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY

FEATURES ?Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. ?Outstandingsurgeresistance. Surgewithstandbetweenopencontac

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AGQ21009

Highcapacity2Amp,FlatandCompactpackageTelephoneswitchboard

FEATURES 1.Highcapacity:2A 2.CompactflatbodysavesspaceWithasmallfootprintof 10.6mm(L)×7.2mm(W).417inch(L)×.283inch(W)forspacesavings, italsohasaveryshortheightof5.2mm.205inch.(StandardPCboardtype.) 3.Highsensitivitysinglesidestabletyp

PanasonicPanasonic Semiconductor

松下松下電器

AGQ21009

ULTRA-SMALLPACKAGEFLATPOLARIZEDRELAY

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

ASX21009

HIGHSENSITIVITYRELAYWITHGUARANTEEDLOWLEVELSWITCHINGCAPACITY

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

BU21009MUV

CapacitiveSensorSwitchControlIC

ROHMRohm

羅姆羅姆半導(dǎo)體集團

ISL21009

HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences

Intersil

Intersil Corporation

ISL21009

Precision,LowNoiseFGA??VoltageReferences

TheISL21009FGA?voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalogtechnology.TheISL21009featuresverylownoise(4μVP-Pfor0.1Hzto10Hz),lowoperatingcurrent(180μA,Max),and3ppm/°Coft

Intersil

Intersil Corporation

ISL21009

HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences

Intersil

Intersil Corporation

ISL21009

HighVoltageInputPrecision,LowNoiseFGA?VoltageReferences

Features ?OutputVoltages........1.250V,2.500V,4.096V,5.000V ?InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV ?InputVoltageRange...................3.5Vto16.5V ?OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) ?SupplyCurr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL21009B

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

ISL21009C

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

ISL21009D

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

ISL21009MEP

HighVoltageInputPrecision,LowNoiseFGA?VoltageReferences

Features ?SpecificationsperDSCCVIDV62/08629 ?FullMil-TempElectricalPerformancefrom-55°Cto+125°C ?ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite ?FullHomogeneousLotProcessinginWaferFab ?NoCombinationofWaferFabricationLotsinAssembly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL21009MEP

HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences

TheISL21009MEPFGA?voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalogtechnology.TheISL21009MEPfeaturesverylownoise(4.5μVP-Pfor0.1Hzto10Hz),lowoperatingcurrent(180μA,Max),and3ppm

Intersil

Intersil Corporation

LTE21009

NPNmicrowavepowertransistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT440Ametalceramicflangepackagewiththeemitterconnectedtotheflange. FEATURES ?Diffusedemitterballastingresistors ?Self-alignedprocessentirelyionimplantedandgoldsandwichmetallization ?optimumtemp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

LTE21009R

NPNmicrowavepowertransistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT440Ametalceramicflangepackagewiththeemitterconnectedtotheflange. FEATURES ?Diffusedemitterballastingresistors ?Self-alignedprocessentirelyionimplantedandgoldsandwichmetallization ?optimumtemp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    MV21009

  • 制造商：

    MICROSEMI

  • 制造商全稱：

    Microsemi Corporation

  • 功能描述：

    GaAs Varactor Diodes Abrupt Junction

供應(yīng)商型號品牌批號封裝庫存備注價格
Microchip
7
只做正品
 詢價
MOT
24+
TO-92
2000
詢價
ONSEMICONDU
24+
原裝進口原廠原包接受訂貨
34000
原裝現(xiàn)貨假一罰十
 詢價
ETL
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
ON/安森美
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ONN
1535+
31900
詢價
ON
TO-92
68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
 詢價
ON Semiconductor
2022+
TO-92
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
ON/安森美
23+
TO-92
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
ON/安森美
23+
NA/
885
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
更多MV21009供應(yīng)商 更新時間2025-1-11 14:00:00

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