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NCV7705

Mirror-ModuleDriver-IC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV7705

Mirror-ModuleDriver-IC

TheNCV7705/NCV7706isapowerfulDriver?ICforautomotive bodycontrolsystems.TheICisdesignedtocontrolseveralloadsin thefrontdoorofavehicle.ThemonolithicICisabletocontrolmirror functionslikemirrorpositioning,heatingandfolding.Inaddition, NCV7706includestheele

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV7705A

Mirror-ModuleDriver-IC

TheNCV7705/NCV7706isapowerfulDriver?ICforautomotive bodycontrolsystems.TheICisdesignedtocontrolseveralloadsin thefrontdoorofavehicle.ThemonolithicICisabletocontrolmirror functionslikemirrorpositioning,heatingandfolding.Inaddition, NCV7706includestheele

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDL7705P

1550nmOPTICALFIBERCOMMUNICATIONSInGaAsPSTRAINEDMQWDFBDC-PBHLASERDIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL7705P

1550nmOPTICALFIBERCOMMUNICATIONSEAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULEFOR2.5Gb/sULTRALONG-REACHAPPLICATIONS

DESCRIPTION TheNDL7910PisanEAmodulatorintegrated1550nmDFB-LDfor2.5Gb/s.ThenewlydevelopedbandgapenergycontrolledSelectiveMOVPEtechnologyisutilizedasfabricationmethod.Itisdesignedfor2.5Gb/sultralongreachapplications. FEATURES ?Integratedelectroabsorptionmodu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL7705P

1550nmCWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=20mWMIN. ?WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL7705P

1310nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7603PSeriesisa1310nmphase-shiftedDFB(distributedfeedback)laserdiodemodulewithsinglemodefiber.TheMultipleQuantumWell(st-MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverawidetemperaturerangeof-40to+85°C.It

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL7705P

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7705PSeriesisa1550nmphase-shiftedDFB(DistributedFeed-Back)laserdiodemodulewithopticalisolator.MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof40to+85C. Itisdesig

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL7705P

CWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULEFORD-WDMAPPLICATIONS

DESCRIPTION TheNX8563LBSeriesisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealforD-WDMtransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=10mWMIN. ?Wavelengthavailabilityλp=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL7705P

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    MX7705EWE-T

  • 功能描述：

    模數(shù)轉(zhuǎn)換器 - ADC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 通道數(shù)量：

    2

  • 結(jié)構(gòu)：

    Sigma-Delta

  • 轉(zhuǎn)換速率：

    125 SPs to 8 KSPs

  • 分辨率：

    24 bit

  • 輸入類型：

    Differential

  • 信噪比：

    107 dB

  • 接口類型：

    SPI

  • 工作電源電壓：

    1.7 V to 3.6 V, 2.7 V to 5.25 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    VQFN-32

供應(yīng)商型號品牌批號封裝庫存備注價格
Microchip
21+
Leadless Land Grid Array
15000
只做原裝
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microchip
23+
Leadless Land Grid Array
15420
原包裝原標(biāo)現(xiàn)貨,假一罰十,
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Microchip
344
只做正品
 詢價
更多MX7705EWE-T供應(yīng)商 更新時間2025-2-15 14:36:00

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