訂購數(shù)量 | 價格 |
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首頁>NAND04GW3B2DN6>詳情
NAND04GW3B2DN6 集成電路(IC)存儲器 STMICROELECTRONICS/意法半導(dǎo)體
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號
:NAND04GW3B2DN6
- 存儲器格式
:閃存
- 技術(shù)
:FLASH - NAND
- 存儲容量
:4Gb (512M x 8)
- 寫周期時間 - 字,頁
:25ns
- 訪問時間
:25ns
- 存儲器接口
:并聯(lián)
- 電壓 - 電源
:2.7V ~ 3.6V
- 工作溫度
:-40°C ~ 85°C(TA)
- 安裝類型
:表面貼裝
- 封裝/外殼
:48-TFSOP(0.724\,18.40mm 寬)
- 供應(yīng)商器件封裝
:48-TSOP
供應(yīng)商
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