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NAND512R3A2BZA6集成電路(IC)的存儲器規(guī)格書PDF中文資料

NAND512R3A2BZA6
廠商型號

NAND512R3A2BZA6

參數(shù)屬性

NAND512R3A2BZA6 封裝/外殼為63-VFBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLSH 512MBIT PARALLEL 63VFBGA

封裝外殼

63-VFBGA

文件大小

916.59 Kbytes

頁面數(shù)量

57

生產廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網

原廠標識
數(shù)據(jù)手冊

原廠下載下載地址一下載地址二到原廠下載

更新時間

2025-5-8 13:02:00

人工找貨

NAND512R3A2BZA6價格和庫存,歡迎聯(lián)系客服免費人工找貨

NAND512R3A2BZA6規(guī)格書詳情

NAND512R3A2BZA6屬于集成電路(IC)的存儲器。由意法半導體集團制造生產的NAND512R3A2BZA6存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

產品屬性

更多
  • 產品編號:

    NAND512R3A2BZA6E

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    非易失

  • 存儲器格式:

    閃存

  • 技術:

    閃存 - NAND

  • 存儲容量:

    512Mb(64M x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    60ns

  • 電壓 - 供電:

    1.7V ~ 1.95V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    63-VFBGA

  • 供應商器件封裝:

    63-VFBGA(8.5x15)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供應商 型號 品牌 批號 封裝 庫存 備注 價格
STMicroelectronics
21+
60-FBGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營
詢價
ST
24+
BGA
20000
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??!
詢價
STM
22+
BGA
22108
原裝正品現(xiàn)貨
詢價
ST
23+
BGA
3000
原裝正品假一罰百!可開增票!
詢價
STMicroelectronics
18+
ICFLASH512MBIT63VFBGA
6580
公司原裝現(xiàn)貨
詢價
STM
2016+
BGA
6523
只做進口原裝現(xiàn)貨!假一賠十!
詢價
ST/意法
BGA
125000
一級代理原裝正品,價格優(yōu)勢,長期供應!
詢價
STM
24+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ST/意法
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
ST/意法
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價