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NAND512W3A2BN6E集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

NAND512W3A2BN6E
廠商型號(hào)

NAND512W3A2BN6E

參數(shù)屬性

NAND512W3A2BN6E 封裝/外殼為48-TFSOP(0.724",18.40mm 寬);包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 512MBIT PARALLEL 48TSOP

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLASH 512MBIT PARALLEL 48TSOP

封裝外殼

48-TFSOP(0.724",18.40mm 寬)

文件大小

916.59 Kbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

原廠下載下載地址一下載地址二到原廠下載

更新時(shí)間

2025-4-10 22:30:00

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NAND512W3A2BN6E價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

NAND512W3A2BN6E規(guī)格書(shū)詳情

NAND512W3A2BN6E屬于集成電路(IC)的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的NAND512W3A2BN6E存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    NAND512W3A2BN6E

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    閃存 - NAND

  • 存儲(chǔ)容量:

    512Mb(64M x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    50ns

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    48-TFSOP(0.724",18.40mm 寬)

  • 供應(yīng)商器件封裝:

    48-TSOP

  • 描述:

    IC FLASH 512MBIT PARALLEL 48TSOP

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
2020+
TSOP
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
ST/意法
24+
TSSOP48
196455
原裝現(xiàn)貨假一賠十
詢價(jià)
ST/意法
24+
48TSOP
990000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
ST/意法
22+
TSOP48
50000
只做原裝假一罰十,歡迎咨詢
詢價(jià)
ST
21+
TSOP
1218
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
詢價(jià)
ST
20+
TSSOP
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
詢價(jià)
ST/意法
24+
NA/
1218
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
詢價(jià)
ST/意法
21+
TSSOP
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
ST/意法
23+
TSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)