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NCE6990D中文資料無錫新潔能股份數(shù)據(jù)手冊PDF規(guī)格書

NCE6990D
廠商型號

NCE6990D

功能描述

NCE N-Channel Enhancement Mode Power MOSFET

絲印標識

NCE6990D

封裝外殼

TO-263-2L

文件大小

440.05 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Wuxi NCE Power Semiconductor Co., Ltd
企業(yè)簡稱

NCEPOWER無錫新潔能股份

中文名稱

無錫新潔能股份有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-9 16:42:00

NCE6990D規(guī)格書詳情

Description

The NCE6990D uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =69V,ID =90A

RDS(ON) < 7.2m? @ VGS=10V (Typ:6.2m?)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

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