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NE3

CABLE CLAMPS, PLASTISOL DIPPED

RICHCO

Richco, Inc.

NE3

包裝：散裝 類別：電纜，電線 - 管理 電纜支撐與緊固件 描述：CBL CLAMP P-TYPE FASTENER

EssentraEssentra Components

益升華益升華貿(mào)易(寧波)有限公司

NE3004-VA10A

Near edge thermal printhead (300 dots / inch)

TheNE3004-VA10Aisanearedgethin-filmthermalprintheadwheretheprintingmediumpassesstraightthrough.Thisprintheadiscapableofprintingspeedsupto8inch/secondandissuitedforlabelprinters. Features 1)Inclinedtowardtheprintingsurfacetoprovideexcellentprintingquali

ROHMRohm

羅姆羅姆半導(dǎo)體集團

NE321000

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialandspaceapplications. FEATURES ?SuperLowNoiseFigure&Hi

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE321000

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION NECsNE321000isaHetero-JunctionFETchipthatutilizesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreatehighelectronmobility.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercial,industrialandspaceapplications. NECsstringe

CEL

California Eastern Labs

NE321000

HETERO JUNCTION FIELDEFFECT TRANSISTOR

DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialand spaceapplications. FEATURES ?SuperLowNoiseFigure&High

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE3210S01

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE3210S01

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE3210S01-T1

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE3210S01-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE3210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE3210S01-T1B

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE32484A

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE32484A

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE32484A

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE32484A_98

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE32484AS

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE32484A-SL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE32484A-SL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE32484A-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NE3

  • 制造商：

    Essentra Components

  • 類別：

    電纜，電線 - 管理 > 電纜支撐與緊固件

  • 系列：

    Richco

  • 包裝：

    散裝

  • 類型：

    線夾，P 型

  • 開口尺寸：

    0.188"（4.78mm）

  • 安裝類型：

    緊固件

  • 材料：

    鋁

  • 顏色：

    黑色，銀色

  • 寬度：

    0.375"（9.53mm）

  • 面板孔尺寸：

    0.204"（5.18mm）

  • 材料厚度：

    0.031"（0.80mm）

  • 特性：

    保護涂層

  • 描述：

    CBL CLAMP P-TYPE FASTENER

供應(yīng)商型號品牌批號封裝庫存備注價格
Richco
新
775
全新原裝 貨期兩周
 詢價
Richco
2022+
771
全新原裝 貨期兩周
 詢價
Essentra
22+
NA
9692
加我QQ或微信咨詢更多詳細信息,
 詢價
ESSENTRA COMPONENTS
23+
原封阻容元件
1000000
詢價
NEC
SMT-86
157
正品原裝--自家現(xiàn)貨-實單可談
 詢價
NEC
23+
SOT-343
30000
原裝正品,假一罰十
 詢價
NEC原裝
1215+
SOT343
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
 詢價
NEC
05PB
SOT343
2500
全新原裝進口自己庫存優(yōu)勢
 詢價
NEC
13+
SO-86
9988
原裝分銷
 詢價
NEC
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
更多NE3供應(yīng)商 更新時間2025-1-10 16:06:00

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