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NE6510379A-T1中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NE6510379A-T1
廠商型號

NE6510379A-T1

功能描述

3 W L-BAND POWER GaAs HJ-FET

文件大小

97.46 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會社官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-8 22:58:00

NE6510379A-T1規(guī)格書詳情

DESCRIPTION

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? GaAs HJ-FET Structure

? High Output Power :

PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

? High Linear Gain :

GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty

GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty

? High Power Added Efficiency:

58 typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

52 typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
NEC
2016+
SMT-86
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
NEC
13+
12278
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
NEC
2020+
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
NEC
23+
NA/
3285
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價(jià)
NEC
ROHS
13352
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
詢價(jià)
NEC
SMT-86
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
NEC
SMT-86
893993
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
NEC
21+
SMT-86
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
PHI
23+
DIP
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
CEL
22+
79A
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)