首頁 >NP36N055HHE>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NP36N055HHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=14mΩMAX.(VGS=10V,ID=18A) ?LowCiss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP36N055HHE | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTORNP36N055HLE,NP36N055ILE,NP36N055SLE SWITCHING CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=18A) RDS(on)2=16 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=14mΩMAX.(VGS=10V,ID=18A) ?LowCiss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTORNP36N055HLE,NP36N055ILE,NP36N055SLE SWITCHING CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=18A) RDS(on)2=16 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=14mΩMAX.(VGS=10V,ID=18A) ?LowCiss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-251 |
8866 |
詢價 | |||
NEC |
23+ |
TO-251 |
12275 |
全新原裝 |
詢價 | ||
NEC |
6000 |
面議 |
19 |
TO-251 |
詢價 | ||
NEXPERIA/安世 |
23+ |
SOT78 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
NEC |
22+ |
TO-251 |
6000 |
十年配單,只做原裝 |
詢價 | ||
NEC |
23+ |
TO-251 |
6000 |
原裝正品,支持實單 |
詢價 | ||
NEC |
22+ |
TO-251 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
NEC |
24+ |
TO-251 |
37650 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
NEC |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 |
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相關(guān)庫存
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