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Packing List Envelopes

3M

3M Electronics

NP50N04YUK

40 V – 50 A – N-channel Power MOS FET Application: Automotive

Description TheNP50N04YUKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.8m?MAX.(VGS=10V,ID=25A) ?Nonlogicleveldrivetype ?DesignedforautomotiveapplicationandAEC-Q101qualif

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50N04YUK_V01

40 V – 50 A – N-channel Power MOS FET Application: Automotive

Description TheNP50N04YUKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.8m?MAX.(VGS=10V,ID=25A) ?Nonlogicleveldrivetype ?DesignedforautomotiveapplicationandAEC-Q101qualif

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50N04YUK-E1-AY

40 V – 50 A – N-channel Power MOS FET Application: Automotive

Description TheNP50N04YUKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.8m?MAX.(VGS=10V,ID=25A) ?Nonlogicleveldrivetype ?DesignedforautomotiveapplicationandAEC-Q101qualif

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50N04YUK-E2-AY

40 V – 50 A – N-channel Power MOS FET Application: Automotive

Description TheNP50N04YUKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.8m?MAX.(VGS=10V,ID=25A) ?Nonlogicleveldrivetype ?DesignedforautomotiveapplicationandAEC-Q101qualif

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P03YDG

MOS FIELD EFFECT TRANSISTOR

Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=8.4mΩMAX.(VGS=?10V,ID=?25A) ?LowCiss:Ciss=2300pFTYP.(VDS=?25V,VGS=0V) ?Designedforautomotiveapp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P03YDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=8.4mΩMAX.(VGS=?10V,ID=?25A) ?LowCiss:Ciss=2300pFTYP.(VDS=?25V,VGS=0V) ?Designedforautomotiveapp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P03YDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=8.4mΩMAX.(VGS=?10V,ID=?25A) ?LowCiss:Ciss=2300pFTYP.(VDS=?25V,VGS=0V) ?Designedforautomotiveapp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P04KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=10mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P04KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=10mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NP5

  • 制造商：

    AB

  • 功能描述：

    POT5K ALLEN BRADLEY S7D7B

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
3000
公司存貨
 詢價
24+
BGA
2978
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨
 詢價
RENESAS
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢價
MMCNETEORKS
24+
12
原裝現(xiàn)貨,可開13%稅票
 詢價
NEC
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
NEC
23+
TO-252
11750
全新原裝
 詢價
N
24+
TO252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
NPL
17+
MQFP
9800
只做全新進(jìn)口原裝,現(xiàn)貨庫存
 詢價
NPL
1998
MQFP
130
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
Renesas
19+
TO-252
87454
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多NP5供應(yīng)商 更新時間2025-2-4 16:00:00

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