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NP60N04VLK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

NP60N04VLK

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

NP60N04VLK

40 V – 60 A – N-channel Power MOS FET

The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications.; ? Super low on-state resistance RDS(on) = 3.9 mΩ MAX. (VGS = 10 V, ID = 30 A)\n? Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)\n? Logic level drive type\n? Designed for automotive application and AEC-Q101 qualified\n;

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

Renesas

NP60N04VLK

N-channel Power MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

NP60N04VLK_V01

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

NP60N04VLK-E1-AY

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

NP60N04VLK-E2-AY

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

NP60N04VLK-E1-AY

N-channel Power MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

NP60N04VLK-E2-AY

N-channel Power MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RENESAS

技術(shù)參數(shù)

  • Channels (#)：

    1

  • Pkg. Type：

    MP-3ZP

  • Standard Pkg. Type：

    TO-252 / DPAK

  • VDSS (Max) (V)：

    40

  • ID (A)：

    60

  • RDS (ON)(Max) @10V or 8V (mohm)：

    3.9

  • RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm)：

    8.6

  • Pch (W)：

    105

  • VGSS：

    20

  • Vgs (off) (Max) (V)：

    2.5

  • RDS (ON) (Typical) @ 10V / 8V (mohm)：

    3.2

  • Ciss (Typical) (pF)：

    2450

  • QG (nC) typ (nC)：

    42

  • Mounting Type：

    Surface Mount

  • Series Name：

    NP Series

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS/瑞薩
2511
TO-252
360000
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
 詢價(jià)
RENESAS/瑞薩
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RENESAS/瑞薩
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS/瑞薩
2022+
TO-252
13012
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
RENESAS(瑞薩)/IDT
24+
TO252
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
RENESAS/瑞薩
24+
NA/
16262
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
RENESAS/瑞薩
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
RENESAS/瑞薩
24+
TO-252
60000
全新原裝現(xiàn)貨
 詢價(jià)
NK/南科功率
2025+
TO-252
986966
國產(chǎn)
 詢價(jià)
Renesas
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
更多NP60N04VLK供應(yīng)商 更新時(shí)間2025-8-2 17:32:00

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