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NSS60101DMR6T1G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NSS60101DMR6T1G
廠商型號(hào)

NSS60101DMR6T1G

功能描述

Low VCE(sat) NPN Transistors, 60 V, 1 A

文件大小

238.82 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-4-5 18:36:00

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NSS60101DMR6T1G規(guī)格書詳情

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical applications are DC?DC converters and LED lightning,

power management…etc. In the automotive industry they can be used

in air bag deployment and in the instrument cluster. The high current

gain allows e2PowerEdge devices to be driven directly from PMU’s

control outputs, and the Linear Gain (Beta) makes them ideal

components in analog amplifiers.

Features

? NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

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ON
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