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OTBE306KNPIR-F

DC/ACDualRatedCapacitorsProtected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications TypeOTBisacapacitorwitharobustconstructionconsistingofapaperoracombinationofpaperandfilmdielectricsystemwithfoilelectrodes,andisprotectedbyapressuresensitiveinterrupter.TheOTBisUL

CDE

Cornell Dubilier Electronics

OTBE306KNPIR-F

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

CDE

Cornell Dubilier Electronics

OTBE306KNPIR-F

DC/ACDualRatedCapacitors

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

DC/ACDualRatedCapacitorsProtected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications TypeOTBisacapacitorwitharobustconstructionconsistingofapaperoracombinationofpaperandfilmdielectricsystemwithfoilelectrodes,andisprotectedbyapressuresensitiveinterrupter.TheOTBisUL

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

DC/ACDualRatedCapacitors

CDE

Cornell Dubilier Electronics

P-306-DB

300SeriesDeepBracket(DB)

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

P-306-DB

MultipleDensitySolderEyelet

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

PBPC306

3.0ABRIDGERECTIFIER

Features ?HighCurrentCapability ?SurgeOverloadRatingto50APeak ?HighCaseDielectricStrengthof1500V ?IdealforPrintedCircuitBoardApplication ?ULListedUnderRecognizedComponentIndex,FileNumberE94661

DIODES

Diodes Incorporated

PBSS306NX

100V,4.5ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306NX

100V,4.5ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306NZ-Q

100V,5.1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306PZ-Q

100V,4.1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBY306

Silicon-PowerRectifiers

Silicon-PowerRectifiers ?Nominalcurrent35A ?Repetitivepeakreversevoltage50~1000V ?MetalcaseDO-5 ?Weightapprox.6g ?Standardpolarity:Cathodetostud ?IndexR:Anodetostud ?Standardpackaging:bulk

Diotec

Diotec Semiconductor

詳細參數(shù)

  • 型號:

    NT-306

  • 制造商:

    Pro'skit

  • 功能描述:

    Volatage Detector

供應商型號品牌批號封裝庫存備注價格
臺灣寶工
21+
NA
4600
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領導者
詢價
CRS
23+
DIP-3
36810
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
CRS
DIP-3
35560
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
LUMINIS
23+
NA
25060
只做進口原裝,終端工廠免費送樣
詢價
AMETHERM
20+
傳感器
8796
就找我吧!--邀您體驗愉快問購元件!
詢價
Ametherm
22+
NA
6878
加我QQ或微信咨詢更多詳細信息,
詢價
SANO
6000
面議
19
DIP/SMD
詢價
NUTUNE
24+
XX
6000
進口原裝正品假一賠十,貨期7-10天
詢價
OMRON/歐姆龍
2420+
/
547578
一級代理,原裝正品!
詢價
歐姆龍
2021+
10000
只做原裝,可提供樣品
詢價
更多NT-306供應商 更新時間2025-1-14 13:01:00