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NTBG045N065SC1

Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG045N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG045N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC,?31 mohm, 650 V, M2, D2PAK-7L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie; ? High Junction Temperature\n? Tj = 175C\n? 100% UIL Tested\n? RoHS Compliant\n? High Speed Switching and Low Capacitance\n? 650V rated\n? Max RDS(on) = 52.4 mΩ at Vgs = 18V, Id = 20A\n;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG045N065SC1

絲印：BG045N065SC1；Package：D2PAK-7L；MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 31 m, 62 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG045N065SC1_V01

Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG045N065SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Product Preview

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • Blocking Voltage BVDSS (V)：

    650

  • ID(max) (A)：

    74

  • RDS(on) Typ @ 25°C (mΩ)：

    43.5

  • Qg Total (C)：

    85.1

  • Output Capacitance (C)：

    156

  • Tj Max (°C)：

    175

  • Package Type：

    D2PAK7 (TO-263-7L HV)

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-263-7
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價優(yōu)
 詢價
ON
22+
NA
530
原裝正品支持實(shí)單
 詢價
ON
23+
MOSFET
5864
原裝原標(biāo)原盒 給價就出 全網(wǎng)最低
 詢價
ON Semiconductor
23+/22+
750
原裝進(jìn)口訂貨7-10個工作日
 詢價
onsemi(安森美)
2025+
TO-263-7
55740
詢價
ON
2126
D2PAK-7
686
原裝正品現(xiàn)貨,德為本,正為先,通天下!
 詢價
onsemi
23+
D2PAK-7L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
ON Semiconductor
2025
800
全新、原裝
 詢價
更多NTBG045N065SC1供應(yīng)商 更新時間2025-8-2 16:12:00

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