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NTD4804N

Power MOSFET 30 V, 117 A, Single N??hannel, DPAK/IPAK

PowerMOSFET 30V,117A,SingleN?Channel,DPAK/IPAK Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant App

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD4804N

30V N-Channel MOSFET

?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?TheseDevicesarePb?FreeandareRoHSCompliant ?CPUPowerDelivery ?DC?DCConverters ?LowSideSwitching Description VDS(V)=30V I

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

UMW

NTD4804N

30V N-Channel MOSFET

Description ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?TheseDevicesarePb?FreeandareRoHSCompliant ?CPUPowerDelivery ?DC?DCConverters ?LowSideSwitching Features VDS(V

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

EVVOSEMI

NTD4804N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=124A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

NTD4804N

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD4804N

單 N 溝道，功率 MOSFET，30V，117A，4mΩ

Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK; ? Low RDS(on) to minimize Conduction Losses\n? Low Capacitance to Minimize Driver Losses\n? Optimized Gate Charge to Minimize Switching Losses\n? RoHS Compliant\n;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD4804N

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD4804N-1

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=124A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

NTD4804N-1G

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD4804N-35G

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?OptimizedGateChargetoMinimizeSwitchingLosses ?AECQ101Qualified?NVD4804N ?TheseDevicesarePb?FreeandareRoHSCompliant A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    30

  • VGS Max (V)：

    20

  • VGS(th) Max (V)：

    2.5

  • ID Max (A)：

    117

  • PD Max (W)：

    89.3

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    5.5

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    4

  • Qg Typ @ VGS = 10 V (nC)：

    73

  • Ciss Typ (pF)：

    4490

  • Package Type：

    DPAK-3

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更多NTD4804N供應(yīng)商 更新時(shí)間2025-8-2 10:20:00

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