NTE252

Silicon Complementary Transistors Darlington Power Amplifier

Description: TheNTE251(NPN)andNTE252(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typecasedesignedforgeneral–purposeamplifierandlow–frequencyswitchingapplications. Features: ?HighDCCurrentGain@IC=10A: hFE=2400Typ(NTE251) hFE=4000

NTE252

Darlington Transistors

NTE2520

Silicon Complementary Transistors High Voltage Driver

Features: ?HighBreakdownVoltage ?LargeCurrentCapacity ?IsolatedPackage Applications: ?ColorTVAudioOutput ?Converters ?Inverters

NTE2521

Silicon NPN Transistor Video Output for HDTV

Features: ?HighGainBandwidthProduct:fT=400MHzTyp ?HighBreakdownVoltage:VCEO≥250VMin ?HighCurrent ?LowReverseTransferCapacitanceandExcellentHFResponse

NTE2522

Silicon Complementary Transistors High Speed Switch

Features: HighCurrentCapacity HighCollector–EmitterSaturationVoltage

NTE2523

Silicon Complementary Transistors High Speed Switch

Features: HighCurrentCapacity HighCollector–EmitterSaturationVoltage

NTE2524

Silicon Complementary Transistors High Current Switch

Features: ?LowCollector–EmitterSaturationVoltage ?HighCurrentandHighfT ?ExcellentLinearityofhFE ?FastSwitchingTime

NTE2525

Silicon Complementary Transistors High Current Switch

Features: ?LowCollector–EmitterSaturationVoltage ?HighCurrentandHighfT ?ExcellentLinearityofhFE ?FastSwitchingTime

NTE2526

Silicon Complementary Transistors High Current Switch

Features: ?LowCollector–EmitterSaturationVoltage ?HighCurrentandHighfT ?ExcellentLinearityofhFE ?FastSwitchingTime

NTE2527

Silicon Complementary Transistors High Current Switch

Features: ?LowCollector–EmitterSaturationVoltage ?HighCurrentandHighfT ?ExcellentLinearityofhFE ?FastSwitchingTime