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NVHL040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL040N120SC1

Marking：NVHL040N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 40 m, 60 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,40m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,40m,60A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-247-3LD
100000
全新原裝
 詢價
onsemi
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
onsemi(安森美)
23+
TO-247
8110
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON(安森美)
2112+
-
115000
450個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價
ON
22+
TO-247
4500
原廠原裝,價格優(yōu)勢!13246658303
 詢價
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價
ONSEMI
22
SOP12
110000
全新、原裝
 詢價
onsemi
23+
TO-247-3LD
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價
ON Semiconductor
23+/22+
820
原裝進(jìn)口訂貨7-10個工作日
 詢價
更多NVHL040N120SC1供應(yīng)商 更新時間2024-11-28 16:20:00

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