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NX6508GK57中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NX6508GK57
廠商型號

NX6508GK57

功能描述

LASER DIODE

文件大小

258.43 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

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更新時間

2025-1-14 17:49:00

NX6508GK57規(guī)格書詳情

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM

InGaAsP MQW-DFB LASER DIODE

DESCRIPTION

The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW)

structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.

These devices are ideal for 2.5 Gb/s CWDM application.

FEATURES

? Optical output power Po = 5.0 mW

? Peak emission wavelength λp = 1 470 to 1 610 nm (Based on CWDM)

? Low threshold current lth = 10 mA

? High speed tr = 100 ps MAX.

tf = 150 ps MAX.

? Side mode suppression ratio SMSR = 40 dB

? Operating case temperature range TC = ?20 to +85°C

? InGaAs monitor PIN-PD

? CAN package φ 5.6 mm

? Based on Telcordia reliability

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