首頁(yè) >OSW10N65>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
Silicon650VN-ChannelMOS | NIUHANGDongguan City Niuhang Electronics Co.LTD 紐航電子廣東紐航電子科技有限公司 | NIUHANG | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
650VN-ChannelEnhancementModeMOSFET FEATURES ?10A,650V,RDS(ON)=1.0?@VGS=10V,ID=5.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
650VN-ChannelEnhancementModeMOSFET FEATURES ?10A,650V,RDS(ON)=1.0?@VGS=10V,ID=5.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛(ài)半導(dǎo)體深圳深愛(ài)半導(dǎo)體股份有限公司 | SISEMIC | ||
650VN-chPlanarMOSFET | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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