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P10N40HA

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHB10N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB10N40T

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHP10N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX10N40Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

SIF10N40E

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

深愛半導(dǎo)體深圳深愛半導(dǎo)體股份有限公司

SIHB10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit(

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircui

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF10N40D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHP10N40D

Lowareaspecificon-resistance

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP10N40D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSFP10N40

StarMOSTPowerMOSFET

VDSS=400V ID25=10A RDS(ON)=0.53Ω Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfasterswitchingspee

Good-Ark

GOOD-ARK Electronics

SZ-10N40

TransientVoltageSuppressor

SankenSanken electric

三墾三墾電氣株式會社

WSF10N40

N-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體（深圳）有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
V
23+
TO-220
10000
公司只做原裝正品
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V
22+
TO-220
6000
十年配單,只做原裝
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V
23+
TO-220
6000
原裝正品，支持實單
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V
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
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ST
TO-220
36900
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
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ST
22+
TO-220
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
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ST
23+
TO220
5000
原裝正品,假一罰十
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23+
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56688
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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94702
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更多P10N40HA供應(yīng)商 更新時間2025-1-9 14:30:00

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