零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
P25Q06LA-SSH-KT | | Ultra Low Power, 2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SSH-KW | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SSH-KY | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-IR | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-IT | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-IW | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-IY | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-KR | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-KT | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
P25Q06LA-SUH-KW | | UltraLowPower,2M/1M/512K-bit
2Description
The
P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof
highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto
embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導(dǎo)體(上海)股份有限公司 | PUYA |