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P25Q16L-NXH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-IW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-IY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-KR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-KT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-KW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-NXH-KY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-SSH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

P25Q16L-SSH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導體(上海)股份有限公司

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