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      首頁(yè)>P25Q32LA-TSH-KR-X>規(guī)格書詳情

      P25Q32LA-TSH-KR-X中文資料普冉股份數(shù)據(jù)手冊(cè)PDF規(guī)格書

      P25Q32LA-TSH-KR-X
      廠商型號(hào)

      P25Q32LA-TSH-KR-X

      功能描述

      Ultra Low Power, 32M-bit Serial Multi I/O Flash Memory Datasheet

      文件大小

      3.56236 Mbytes

      頁(yè)面數(shù)量

      97 頁(yè)

      生產(chǎn)廠商 Puran Semiconductor (Shanghai) Co., Ltd
      企業(yè)簡(jiǎn)稱

      PUYA普冉股份

      中文名稱

      普冉半導(dǎo)體(上海)股份有限公司官網(wǎng)

      原廠標(biāo)識(shí)
      數(shù)據(jù)手冊(cè)

      下載地址一下載地址二

      更新時(shí)間

      2025-5-28 9:48:00

      人工找貨

      P25Q32LA-TSH-KR-X價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

      P25Q32LA-TSH-KR-X規(guī)格書詳情

      2 Description

      The

      P25Q32L is a serial interface Flash memory device designed for use in a wide variety of high volume

      consumer based applications in which program code is shadowed from Flash memory into embedded or

      exter nal RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is

      ideal for data storage as well, eliminating the need for additional data storage devices.

      The erase block sizes of the device have been optimized to

      meet the needs of today's code and data storage

      applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.

      Because certain code modules and data storage segments must reside by themselves in their own era se

      regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash

      memory devices can be greatly reduced. This increased memory space efficiency allows additional code

      routines and data storage segments to be added w hile still maintaining the same overall device density.

      The device also contains an additional 3*

      1024 byte security registers with OTP lock (One Time

      Programmable), can be used for purposes such as unique device serialization, system level Electronic Seri al

      Number (ESN) storage, locked key storage, etc.

      Specifically designed for use in many different systems, the device supports read, program, and erase

      operations with a wide supply voltage range of 1.65V to 2.0 V. No separate voltage is required for

      progr amming and erasing.

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