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P25Q80U-D8H-KT中文資料普冉股份數(shù)據(jù)手冊(cè)PDF規(guī)格書

P25Q80U-D8H-KT
廠商型號(hào)

P25Q80U-D8H-KT

功能描述

Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet

文件大小

3.02415 Mbytes

頁(yè)面數(shù)量

67 頁(yè)

生產(chǎn)廠商 Puran Semiconductor (Shanghai) Co., Ltd
企業(yè)簡(jiǎn)稱

PUYA普冉股份

中文名稱

普冉半導(dǎo)體(上海)股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-4-26 9:00:00

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P25Q80U-D8H-KT規(guī)格書詳情

2 Description

The

P25Q80U is a serial interface Flash memory device designed for use in a wide variety of high volume

consumer based applications in which program code is shadowed from Flash memory into embedded or

external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is

ideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the device have been optimized to meet the needs of today's code and data storage

applications. By optimizing the size of the erase blocks, the memory space can be used muc h more efficiently.

Because certain code modules and data storage segments must reside by themselves in their own erase

regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash

memory devices can be greatly re duced. This increased memory space efficiency allows additional code

routines and data storage segments to be added while still maintaining the same overall device density.

The device also contains an additional 3*512

byte security registers with OTP lock (One Time

Programmable), can be used for purposes such as unique device serialization, system level Electronic Serial

Number (ESN) storage, locked key storage, etc.

Specifically designed for use in many different systems, the device supports read, progra

m, and erase

operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for

programming and erasing.

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