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PBSS306NX-Q

100 V, 4.5 A NPN low VCEsat transistor;

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS306PX-Q\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

ETC

ETC

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306NZ-Q

100V,5.1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

ETC

ETC

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PZ-Q

100V,4.1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBY306

Silicon-PowerRectifiers

Silicon-PowerRectifiers ?Nominalcurrent35A ?Repetitivepeakreversevoltage50~1000V ?MetalcaseDO-5 ?Weightapprox.6g ?Standardpolarity:Cathodetostud ?IndexR:Anodetostud ?Standardpackaging:bulk

DiotecDiotec Semiconductor

德歐泰克

技術(shù)參數(shù)

  • Package name：

    SOT89

  • Size (mm)：

    4.5 x 2.5 x 1.5

  • Polarity：

    NPN

  • Ptot (mW)：

    600

  • VCEO [max] (V)：

    100

  • IC [max] (mA)：

    4500

  • hFE [min]：

    200

  • Automotive qualified：

    Y

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
23+
SOT89
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
恩XP
24+
SOT89
60000
全新原裝現(xiàn)貨
 詢價
恩XP
17+
SOT-223
6200
100%原裝正品現(xiàn)貨
 詢價
恩XP
2020+
SOT233
290
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
恩XP
16+
NA
8800
誠信經(jīng)營
 詢價
恩XP
24+
SOT223
5000
只做原裝公司現(xiàn)貨
 詢價
恩XP
1701+
SOT223
7500
只做原裝進(jìn)口,假一罰十
 詢價
Nexperia
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
恩XP
17+
SOT223
9888
全新原裝現(xiàn)貨
 詢價
恩XP
24+
SOT-223
2600
NXP一級代理商原裝進(jìn)口現(xiàn)貨,假一賠十
 詢價
更多PBSS306NX-Q供應(yīng)商 更新時間2025-7-29 11:00:00

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