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PBSS4032SP

絲印:4032SP;Package:SO8;30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Lowcollector-emittersaturationvoltageVCEsat ■Optimizedswitchingtime ■Highcollectorcurrentcapab

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

NEXPERIA

PBSS4032SP

PBSS4032SP - 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor - PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.; ·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistor;

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

Nexperia

PBSS4032SPN

PBSS4032SPN - 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor

30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor - NPN /PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) Surface-Mounted Device (SMD) plastic package.; ·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High energy efficiency due to less heat generation\n·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·Smaller required PCB area than for conventional transistors\n;

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

Nexperia

PBSS4032SPN

30 V NPN/PNP low VCEsat (BISS) transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Lowcollector-emittersaturationvoltageVCEsat ■Optimizedswitchingtime ■Highcollectorcurrentcapab

恩XP

恩XP

PBSS4032SPN

絲?。?a target="_blank" title="Marking" href="/4032spn/marking.html">4032SPN;Package:SO8;30 V NPN/PNP low VCEsat (BISS) transistor

Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areat

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

NEXPERIA

PBSS4032SP_15

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PBSS4032SPN_15

30 V NPN/PNP low VCEsat (BISS) transistor

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

技術(shù)參數(shù)

  • Package version:

    SOT96-1

  • Package name:

    SO8

  • Size (mm):

    4.9 x 3.9 x 1.75

  • Product status:

    Production

  • Polarity:

    PNP

  • number of transistors:

    2

  • P_tot [max] (mW):

    1399.9999999999999

  • V_CEO [max] (V):

    -30

  • I_C [max] (A):

    -4.8

  • V_CEsat [max] (PNP) (mV):

    -390

  • R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ):

    98.000000000000004

  • h_FE [min]:

    200

  • f_T [typ] (MHz):

    115

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Nexperia/安世
22+
SOT96-1
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
Nexperia
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
恩XP
23+
SOP8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
Nexperia(安世)
2447
SO-8
115000
1000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
詢價(jià)
NEXPERIA
1809+
SOP-8
3675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
恩XP
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
NEXPERIA/安世
23+
SOT96
6000
原裝正品假一罰百!可開增票!
詢價(jià)
恩XP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
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恩XP
23+
SOP8
78280
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
恩XP
22+
N/A
12245
現(xiàn)貨,原廠原裝假一罰十!
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更多PBSS4032SP供應(yīng)商 更新時(shí)間2025-8-2 16:20:00