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零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Ch150VFastSwitchingMOSFETs GeneralDescription AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications LoadSwitch LEDApplications NetworkingApplications QuickCharger | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK | ||
N-Ch150VFastSwitchingMOSFETs GeneralDescription ?AdvancedTrenchMOSTechnology ?LowGateCharge ?LowRDS(ON) ?100EASGuaranteed ?GreenDeviceAvailable Applications ?LoadSwitch ?LEDApplications ?NetworkingApplications ?QuickCharger | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK | ||
N-ChannelPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?90A,150V,RDS(on)=0.018Ω@VGS=10V ?Lowgatecharge(typical220nC) ?LowCrss(typical200pF) ?Fastswitching ?1 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?90A,150V,RDS(on)=0.018Ω@VGS=10V ?Lowgatecharge(typical220nC) ?LowCrss(typical200pF) ?Fastswitching ?1 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.018Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
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