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PDTA114ET-Q

50V,100mAPNPresistor-equippedtransistor;R1=10kΩ,R2=10kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:PDTC114ET-Q 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA114EU

PNPresistor-equippedtransistor

DESCRIPTION PNPresistor-equippedtransistorinaSOT323plasticpackage. NPNcomplement:PDTC114EU. FEATURES ?Built-inbiasresistorsR1andR2(typ.10k?each) ?Simplificationofcircuitdesign ?Reducesnumberofcomponentsandboardspace. APPLICATIONS ?Especiallysuitableforspac

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTA114EU

LowVCEsat(BISS)transistors

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTA114EU

PNPresistor-equippedtransistors;R1=10k廓,R2=10k廓

Generaldescription PNPResistor-EquippedTransistor(RET)familyinsmallSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■100mAoutputcurrentcapability ■Built-inbiasresistors ■Simplifiescircuitdesign ■Reducescomponentcount ■Reducespicka

ETC

ETC

PDTA114EU

NPNresistor-equippedtransistors;R1=10k?,R2=10k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA114EU-Q

50V,100mAPNPresistor-equippedtransistor;R1=10kΩ,R2=10kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT323(SC-70)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:PDTC114EU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomp

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA114T

PNPresistor-equippedtransistors;R1=10kOHM,R2=open

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PDTA114T

PNPresistor-equippedtransistors;R1=10kW,R2=open

Generaldescription PNPResistor-EquippedTransistors(RET)familyinsmallplasticpackages. Features ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespickandplacecosts ■Simplifiescircuitdesign Applications ■Digitalapplications ■C

ETC

ETC

PDTA114T

PNPresistor-equippedtransistors;R1=10kW,R2=open

Features *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA114T_SER

PNPresistor-equippedtransistors;R1=10kW,R2=open

Features *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

技術(shù)參數(shù)

  • Package name：

    DFN1412D-3

  • Size (mm)：

    1.4 x 1.2 x 0.48

  • Channel type：

    PNP

  • Ptot (mW)：

    250

  • R2 (typ) (kΩ)：

    10

  • IC [max] (mA)：

    100

  • R1 (typ) (kΩ)：

    10

  • VCEO (V)：

    50

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更多PDTA114EQC-Q供應(yīng)商 更新時(shí)間2025-7-29 17:02:00

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