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PDTB123Y

PNP 500 mA, 50 V resistor-equipped transistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTB123Y

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB123YK

PNP 500 mA, 50 V resistor-equipped transistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTB123YK

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB123YK

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YQA

50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YQA

50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YQA

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YS

PNP 500 mA, 50 V resistor-equipped transistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTB123YS

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB123YS

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YT

PNP 500 mA, 50 V resistor-equipped transistors

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTB123YT

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

Generaldescription 500mAPNPResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digitalapp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB123YT

50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:PDTD123YT 2.Featuresandbenefits ?500mAoutputcurrentcapability ?Reducespickandplacecosts ?Built-inbiasresistors ?±10re

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YT

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YT-Q

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription 500mAPNPResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-Mounted Device(SMD)plasticpackage. NPNcomplement:PDTD123YT-Q. 2.Featuresandbenefits ?500mAoutputcurrentcapability ?Reducespickandplacecosts ?Built-inbiasresistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YU

500 mA, 50 V PNP resistor-equipped transistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YU

500 mA, 50 V NPN resistor-equipped transistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YU

500 mA, 50 V PNP resistor-equipped transistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB123YK

Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號:

    PDTB123Y

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NXP
24+
SOT23
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
Nexperia
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價(jià)
NXP
1736+
SOT-23
8298
只做進(jìn)口原裝正品假一賠十!
詢價(jià)
NXP
23+
SOT-23
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
Nexperia/安世
22+
SOT23
390000
原廠原裝正品現(xiàn)貨
詢價(jià)
NXP
20+
SOT-23
19570
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價(jià)
NXP
2020+
SOT-23
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
NEXPERIA/安世
24+
NA
2339999
原裝現(xiàn)貨,專業(yè)配單專家
詢價(jià)
只做原裝
24+
SOT23
36520
一級代理/放心采購
詢價(jià)
Nexperia(安世)
2117+
SOT-323
315000
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
更多PDTB123Y供應(yīng)商 更新時(shí)間2025-1-11 10:20:00