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PDTC123JT

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123JT

50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA123JT 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123JT

PNP resistor-equipped transistors; R1 = 2.2 k?, R2 = 47 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123JT

NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline, symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JT

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline, symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JT

Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JT-Q

50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA123JT 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123JT,215

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-236-3,SC-59,SOT-23-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS NPN 50V TO236AB

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PDTC123JT,235

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-236-3,SC-59,SOT-23-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS NPN 50V TO236AB

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PDTC123JU

NPNresistor-equippedtransistors;R1=2.2kOHM,R2=47kOHM

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline, symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JU

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JU

NPNresistor-equippedtransistors;R1=2.2k廓,R2=47k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123JU

50V,100mANPNresistor-equippedtransistor;R1=2.2kΩ,R2=47kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA123JU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123JU

PNPresistor-equippedtransistors;R1=2.2k?,R2=47k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123JU-Q

50V,100mANPNresistor-equippedtransistor;R1=2.2kΩ,R2=47kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA123JU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123T

NPNresistor-equippedtransistors;R1=2.2kW,R2=open

Generaldescription NPNResistor-EquippedTransistors(RET)familyinSurfaceMountedDevice(SMD)plasticpackages. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■100mAoutputcurrentcapability

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123T

NPNresistor-equippedtransistors;R1=2.2kW,R2=open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123T_SER

NPNresistor-equippedtransistors;R1=2.2kW,R2=open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC123TE

NPNresistor-equippedtransistors;R1=2.2kW,R2=open

Generaldescription NPNResistor-EquippedTransistors(RET)familyinSurfaceMountedDevice(SMD)plasticpackages. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■100mAoutputcurrentcapability

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC123TE

NPNresistor-equippedtransistors;R1=2.2killoohm,R2=open

Generaldescription NPNResistor-EquippedTransistors(RET)familyinSurfaceMountedDevice(SMD)plasticpackages. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■100mAoutputcurrentcapability

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    PDTC123JT

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    TRANSISTOR DIGITAL SOT-23

  • 功能描述:

    TRANSISTOR, DIGITAL, SOT-23

  • 功能描述:

    TRANSISTOR, DIGITAL, SOT-23; Transistor

  • Polarity:

    NPN; Collector Emitter Voltage

  • V(br)ceo:

    50V; Transition Frequency Typ

  • ft:

    230MHz; Power Dissipation

  • Pd:

    250mW; DC Collector

  • Current:

    100mA; DC Current Gain

  • hFE:

    100; Operating Temperature ;RoHS

  • Compliant:

    Yes

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEXPERIA/安世
21+
SOT-23
600000
航宇科工半導(dǎo)體-中國(guó)航天科工集團(tuán)戰(zhàn)略合作伙伴!
詢價(jià)
NXP(恩智浦)
23+
標(biāo)準(zhǔn)封裝
10798
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
詢價(jià)
NEXPERIA
19+
SOT-23-3
1787
全新原裝公司現(xiàn)貨
詢價(jià)
NEXPERIA/安世
21+
SOT23
10000
全新原裝 公司現(xiàn)貨 價(jià)優(yōu)
詢價(jià)
NXP(恩智浦)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
NEXPERIA B.V.
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
Nexperia
2405+
原廠封裝
1940396
原裝正品,渠道可追溯
詢價(jià)
Nexperia
23+
NA
1940396
公司現(xiàn)貨原裝
詢價(jià)
NXP(恩智浦)
2023+
N/A
4550
全新原裝正品
詢價(jià)
NXP
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
更多PDTC123JT供應(yīng)商 更新時(shí)間2025-1-11 13:01:00