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PESD3V3S2UAT

DoubleESDprotectiondiodeinSOT23package

1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD3V3S2UAT

DoubleESDprotectiondiodesinSOT23package

FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD3V3S2UAT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES ?UnidirectionalESDprotectionofupt

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PESD3V3S2UAT-Q

DoubleESDprotectiondiodeinSOT23package

1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD3V3S2UQ

DoubleESDprotectiondiodesinSOT663package

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PESD3V3S2UQ

DoubleESDprotectiondiodesinSOT663package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD3V3S2UT

350Wpeakpulsepower(tp=8/20μs)

Features 350Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)20A(8/20μs) Applic

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

PESD3V3S2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES ?Uni-directionalESDprotectionofuptotwolines ?Max.peakpulsepower:Ppp=330Wattp=8/2

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PESD3V3S2UT

DoubleESDprotectiondiodesinSOT23package

FEATURES ?Uni-directionalESDprotectionofuptotwolines ?Max.peakpulsepower:Ppp=330Wattp=8/20μs ?Lowclampingvoltage:V(CL)R=20VatIpp=18A ?Ultra-lowreverseleakagecurrent:IRM23kV ?IEC61000-4-2;level4(ESD) ?IEC61000-4-5(su

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD3V3S2UT

DoubleESDprotectiondiodesinSOT23package

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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