首頁 >PHB45NQ15T-VB>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOSstandardlevelFET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-Channel150V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodefieldeffecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Lowon-stateresistance ■Fastswitching ■Lowthermalresistance ■Lowgatecharge. Applications ■DC-to-DCprimarysideswitching ■AC-to | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodefieldeffecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Lowon-stateresistance ■Fastswitching ■Lowthermalresistance ■Lowgatecharge. Applications ■DC-to-DCprimarysideswitching ■AC-to | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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