首頁 >PHD37N06LT>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
PHD37N06LT | TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
PHD37N06LT | N-Channel 60-V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | |
PHD37N06LT | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS60V RDSON(MAX.)37mΩ ID20A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel60V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
詳細參數(shù)
- 型號:
PHD37N06LT
- 制造商:
NXP Semiconductors
- 功能描述:
MOSFET N D-PAK
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
PHILIPS/飛利浦 |
24+ |
TO-252 |
2500 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
PHNXP |
17+ |
SOT428TO-252 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
NXP/恩智浦 |
24+ |
TO-252 |
504357 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
PH |
24+ |
SOT428TO-252 |
8866 |
詢價 | |||
PHILIPS |
24+ |
TO-252 |
4897 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
PH |
23+ |
SOT428 |
21000 |
全新原裝 |
詢價 | ||
NXP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價 | ||
NXP |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
PHI |
22+23+ |
TO-252 |
27518 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
PHNXP |
20+ |
SOT428TO-252 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
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