首頁 >PHP18NQ11T-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-channelTrenchMOSstandardlevelFET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
iscN-ChannelMOSFETTransistor ·DESCRIPTION ·DrainCurrentID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=110V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Generalpurposepoweramplifier | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TrenchMOSstandardlevelFET | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelTrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS?technology. Features ■Lowon-stateresistance ■Fastswitching ■Isolatedmountingbase ■Lowthermalresistance Applications ■DC-to-DCconverters ■Switched-mode | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelTrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS?technology. Features ■Lowon-stateresistance ■Fastswitching ■Isolatedmountingbase ■Lowthermalresistance Applications ■DC-to-DCconverters ■Switched-mode | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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