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PHP225

Dual P-channel enhancement mode MOS transistor

DESCRIPTION TwoP-channelenhancementmodeMOStransistorsinan8-pinplasticSOT96-1(SO8)package. FEATURES ?High-speedswitching ?Nosecondarybreakdown ?Verylowon-resistance. APPLICATIONS ?Motorandactuatordriver ?Powermanagement ?Synchronizedrectification.

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHP225

Dual P-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?LoadSwitches

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

VBSEMI

PHP225

Nexperia B.V. All rights reserved [NEXPERIA]^1325

1.1Generaldescription DualintermediatelevelP-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingverticalD-MOStechnology.Thisproductisdesignedandqualified foruseincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresan

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NEXPERIA

PHP225

PHP225 - Dual P-channel intermediate level FET

Dual P-channel intermediate level FET - Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.; ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics\n;

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

Nexperia

PHP225

Dual P-channel intermediate level FET

恩XP

恩XP

PHP225NQ04T

N-channel TrenchMOS standard level FET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC-to-DCconverters ■Generalind

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHP225NQ04T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.1mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

PHP225_11

Dual P-channel intermediate level FET

恩XP

恩XP

PHP225NQ04T

Small signal MOSFETs

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

Nexperia

技術(shù)參數(shù)

  • Package name:

    SO8

  • Product status:

    Production

  • Channel type:

    P

  • Number of transistors:

    2

  • V_DS [max] (V):

    -30

  • R_DSon [max] @ V_GS = 10 V (mΩ):

    250

  • R_DSon [max] @ V_GS = 4.5 V (mΩ):

    400

  • T_j [max] (°C):

    150

  • Q_GD [typ] (nC):

    3

  • Q_G(tot) [typ] @ V_GS = 10 V (nC):

    10

  • P_tot [max] (W):

    2

  • Automotive qualified:

    N

  • C_iss [typ] (pF):

    250

  • C_oss [typ] (pF):

    140

  • Date:

    2011-01-04

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更多PHP225供應(yīng)商 更新時間2025-8-2 16:04:00