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PHX23NQ10T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticfullpackenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching Applications:- ?d.c.tod.c.converters ?switchedmodepowersupplies ?T.V.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHB23NQ10T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB23NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD23NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD23NQ10T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP23NQ10T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP23NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號:

    PHX23NQ10T

  • 功能描述:

    MOSFET RAIL PWR-MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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PH
24+
SOT186ATO-220F
8866
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PH
23+
SOT186A
21000
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恩XP
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原裝
1923+
TO220F
9200
公司原裝現(xiàn)貨假一罰十特價歡迎來電咨詢
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PHI
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
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恩XP
2022+
SOT186A
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23+
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N
23+
TO-220F
6000
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PHI
24+
NA/
970
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更多PHX23NQ10T供應(yīng)商 更新時間2025-5-28 10:02:00