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SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

ETCList of Unclassifed Manufacturers

未分類制造商

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30μVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Semiconductor Solutions Group

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Semiconductor Solutions Group

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Semiconductor Solutions Group

索尼

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源微
23+
SOT-23
385000
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Power-Micro
24+
TO-252
80000
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POWER SUPPLY
1
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MINI
24+
SMD
3600
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MW
24+
65230
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Mean
1931+
N/A
567
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MEAN
20+
電源模塊
335
就找我吧!--邀您體驗(yàn)愉快問購元件!
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24+
320
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CHINAXYJ
23+
SMD
9868
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Bourns Inc.
25+
1210(3225 公制)
9350
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