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首頁 >PMB6618R>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
A6618	文件：552.24 Kbytes Page：9 Pages	CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
AP6618GM-HF	文件：100.58 Kbytes Page：4 Pages	LowOn-resistance,FastSwitchingCharacteristic	A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司	A-POWER
AWU6618	文件：872.94 Kbytes Page：10 Pages	HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule	ANADIGICS ANADIGICS, Inc	ANADIGICS
CGA-6618	文件：297.61 Kbytes Page：8 Pages	DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle	SIRENZA SIRENZA MICRODEVICES	SIRENZA
CGA-6618	文件：323.83 Kbytes Page：5 Pages	DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl	STANFORD Stanford Microdevices	STANFORD
CGA-6618	文件：427.06 Kbytes Page：10 Pages	DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren	RFMD RF Micro Devices	RFMD
CGA-6618Z	文件：427.06 Kbytes Page：10 Pages	DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren	RFMD RF Micro Devices	RFMD
CGA-6618Z	文件：297.61 Kbytes Page：8 Pages	DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle	SIRENZA SIRENZA MICRODEVICES	SIRENZA
GSC6618	文件：275.19 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET	GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司	GTM
HM6618A	文件：2.14584 Mbytes Page：7 Pages	integratedUSBType-C	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HM6618B	文件：2.14584 Mbytes Page：7 Pages	integratedUSBType-C	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
IRF6618	文件：230.62 Kbytes Page：10 Pages	PowerMOSFET Description TheIRF6609combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge	IRF International Rectifier	IRF
IRF6618	文件：234.56 Kbytes Page：9 Pages	HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge	IRF International Rectifier	IRF
IRF6618PBF	文件：250.25 Kbytes Page：9 Pages	IdealforCPUCoreDC-DCConverters	IRF International Rectifier	IRF
IRF6618PBF	文件：240.91 Kbytes Page：8 Pages	DirectFET?PowerMOSFET? Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout	IRF International Rectifier	IRF
IRF6618TRPBF	文件：240.91 Kbytes Page：8 Pages	DirectFET?PowerMOSFET? Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout	IRF International Rectifier	IRF
IRF6618TRPBF	文件：250.25 Kbytes Page：9 Pages	IdealforCPUCoreDC-DCConverters	IRF International Rectifier	IRF
LMH6618	文件：2.37257 Mbytes Page：38 Pages	130MHz,1.25mARRIOOperationalAmplifiers	TI1Texas Instruments 德州儀器	TI1
LMH6618	文件：1.12851 Mbytes Page：26 Pages	130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown	NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司	NSC
LMH6618	文件：1.1904 Mbytes Page：28 Pages	PowerWise?130MHz,1.25mARRIOOperationalAmplifiers	NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司	NSC

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詳細(xì)參數(shù)

型號：
PMB6618R
制造商：
Infineon Technologies AG

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市坤融電子科技有限公司	PMB6618R	SIEMENS/西門子	24+	SOP	100	只做原廠渠道可追溯貨源	詢價
深圳市一線半導(dǎo)體有限公司	PMB6618R	INFINEON	24+	TSSOP-38P	950		詢價
深圳市昌和盛利電子有限公司	PMB6618R	INFINEON	23+	TSSOP-38P	7936		詢價
深圳市佳鑫美電子科技有限公司	PMB6618R	infineon	24+	SSOP	2978	100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨	詢價
深圳市卓越微芯電子有限公司	PMB6618R	INFINEO	2020+	TSSOP	30	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市華來深電子有限公司	PMB6618R	INFINEO	23+	TSSOP	8650	受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!	詢價
深圳市納艾斯科技有限公司	PMB6618R	INFINEO	2020+	TSSOP	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價
深圳市芯誠實(shí)創(chuàng)科技有限公司	PMB6618R	INFINE	2022	TSSOP-	950	全新原裝現(xiàn)貨熱賣	詢價
深圳市威爾健半導(dǎo)體有限公司	PMB6618R	NA	23+	TSOP38	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳廊盛科技有限公司	PMB6618R	NA	2022	TSOP38	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價

更多PMB6618R供應(yīng)商更新時間2025-1-11 16:36:00

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