首頁 >PMD02N60N>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
SuperhighdensecelldesignforlowRDS(ON). | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
FASTIGBTINNPTTECHNOLOGY FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
FASTIGBTINNPTTECHNOLOGY FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FASTIGBTINNPTTECHNOLOGY FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|
