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PSR23N50ATRK

Sales Outline Drawing

MSPIMallory Sonalert Products Inc

馬洛里馬洛里索納特產(chǎn)品有限公司

23N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

23N50E

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMH23N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FMH23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMH23N50ES

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMR23N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

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RAYCHEM
2023+
80000
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RAYCHEM
2023+
SMD
1000
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日產(chǎn)
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
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日產(chǎn)
22+
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50000
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RAYCHEM
SOT-89
68500
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2001
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1535+
1000
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23+
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更多PSR23N50ATRK供應(yīng)商 更新時(shí)間2025-1-20 13:32:00

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