PXFC211507SCV1R250

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET 150W, 28V, 2110 – 2170MHz; ? Broadband internal input and output matching ? Typical Pulsed CW performance, 2170 MHz, 28 V, 10 μs pulse width, 10% duty cycle - Output power at P1dB?= 150 W - Efficiency = 56% - Gain = 19 dB ? Typical single-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model;

PXFC211507SCV1R250

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz

PXFC211507SCV1R250XTMA1

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz

PXFC211507SCV1R250XTMA1

IC AMP RF LDMOS

PXFC211507SCV1R250XTMA1

Package：H-37248G-4/2；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS