首頁(yè) >PZU7.5BASLASHDG>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SiliconPlanarZenerDiodeforConstantvoltageregulator Features ?Thesediodesaredeliveredtaped. ?SmallResinPackageFlatleadtype(SRP-F)issuitableforcompactandhigh-densitysurfacemountdesign. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforConstantvoltageregulator Features ?Thesediodesaredeliveredtaped. ?SmallResinPackageFlatleadtype(SRP-F)issuitableforcompactandhigh-densitysurfacemountdesign. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforStabilizedPowerSupply Features ?Smalloutlineyethigh-powerpermitting500mWpowerdissipation. ?Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. ?ThinUltrasmallResinPackage(TURP-FM)issuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforBi-directionalSurgeAbsorption Features ?ThisproductisforaBi-directionalzenerdiodesoitspossibletouseforBi-directionalsurgeabsorption. ?HighESDresistance(guaranteeof8kV,compliantwiththeIEC61000-4-2standard). ?ExtremelysmallFlatLeadPackage(EFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforBi-directionalSurgeAbsorption Features ?ThisproductisforaBi-directionalzenerdiodesoitspossibletouseforBi-directionalsurgeabsorption. ?HighESDresistance(guaranteeof8kV,compliantwiththeIEC61000-4-2standard). ?ExtremelysmallFlatLeadPackage(EFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforBi-directionalSurgeAbsorption Features ?ThisproductisforaBi-directionalzenerdiodesoitspossibletouseforBi-directionalsurgeabsorption. ?HighESDresistance(guaranteeof8kV,compliantwiththeIEC61000-4-2standard). ?Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. ?U | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforBi-directionalSurgeAbsorption Features ?ThisproductisforaBi-directionalzenerdiodesoitspossibletouseforBi-directionalsurgeabsorption. ?HighESDresistance(guaranteeof8kV,compliantwiththeIEC61000-4-2standard). ?Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. ?U | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
500MWZENERLEADLESSDIODE | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
500mWZenerLeadlessDiodeRLZSeries | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
500mWZenerLeadlessDiode | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|