首頁 >RD6.2M-L>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
ZENERDIODES200mW3-PINMINIMOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
1WPOWERMINIMOLDZENERDIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
1WPOWERMINIMOLDZENERDIODE | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
ZENERDIODES200mW2PINSSUPERMINIMOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES ?SharpBreakdowncharacteristic. ?Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
ZENERDIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES ?LowNoise | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
LOWNOISESHARPBREAKDOWNCHARACTERISTICSZENERDIODES2PINULTRASUPERMINIMOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
ZENERDIODES2PINULTRASUPERMINIMOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
ZENERDIODE200mWESDPROTECTION(5VSignalLine)MINIMOLD | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
SiliconPlanarZenerDiodeforStabilizedPowerSupply Features ?Smalloutlineyethigh-powerpermitting500mWpowerdissipation. ?Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. ?ThinUltrasmallResinPackage(TURP-FM)issuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features ?HighESD-Capability30kV,humanbodymodel(IEC61000-4-2). ?Widezenervoltagerangefrom6.2Vthrough8.2V. ?Halogenfree,EnvironmentalfriendlyPackageincludeConformitytoRoHSDirective. ?UltrasmallPackage(0.6mm×0.3mmSizeleadlesstype). | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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